inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 18N20 description drain current i d = 18a@ t c =25 drain source voltage : v dss = 200v(min) static drain-source on-resistance : r ds(on) = 0.092 (max) fast switching applications switch regulators switching converters, motor drivers, relay drivers absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 200 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 18 a p d total dissipation @t c =25 57 w t j max. operating junction temperature 150 t stg storage temperature -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 18N20 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d =1ma 200 v v gs (th ) gate threshold voltage v ds = v gs ; i d =250 a 1.0 3.0 v v sd diode forward on-voltage i s = 18a ;v gs = 0 1.4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 10a 0.092 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds =160v; v gs = 0 250 a pdf pdffactory pro www.fineprint.cn
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